document number: 93692 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 06-jun-08 1 phase control thyristors (stud version), 110 a 110/111rki series vishay high power products features ? high current and high surge ratings ? hermetic ceramic housing ? rohs compliant ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 110 a to-209ac (to-94) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 110 a t c 90 c i t(rms) 172 a i tsm 50 hz 2080 a 60 hz 2180 i 2 t 50 hz 21.7 ka 2 s 60 hz 19.8 v drm /v rrm 400 to 1200 v t q typical 110 s t j - 40 to 140 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma 110/111rki 40 400 500 20 80 800 900 120 1200 1300
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93692 2 revision: 06-jun-08 110/111rki series vishay high power products phase control thyristors (stud version), 110 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 110 a 90 c maximum rms on-state current i t(rms) dc at 83 c case temperature 172 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 2080 a t = 8.3 ms 2180 t = 10 ms 100 % v rrm reapplied 1750 t = 8.3 ms 1830 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 21.7 ka 2 s t = 8.3 ms 19.8 t = 10 ms 100 % v rrm reapplied 15.3 t = 8.3 ms 14.0 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 217 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.82 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 1.02 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 2.16 m high level value of on-s tate slope resistance r t2 (i > x i t(av) ), t j = t j maximum 1.70 maximum on-state voltage v tm i pk = 350 a, t j = t j maximum, t p = 10 ms sine pulse 1.57 v maximum holding current i h t j = 25 c, anode supply 6 v resistive load 200 ma typical latching current i l 400 switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 300 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 50 a, t j = t j maximum, di/dt = - 5 a/s, v r = 50 v, dv/dt = 20 v/s; gate 0 v 25 110 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 20 ma
document number: 93692 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 06-jun-08 3 110/111rki series phase control thyristors (stud version), 110 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p 5 ms 12 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 3.0 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum peak positive gate voltage +v gm t j = t j maximum, t p 5 ms 20 v maximum peak negative gate voltage -v gm 10 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 180 - ma t j = 25 c 80 120 t j = 140 c 40 - dc gate voltage required to trigger v gt t j = - 40 c 2.5 - v t j = 25 c 1.6 2 t j = 140 c 1 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 6.0 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 140 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.27 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.1 mounting torque, 10 % non-lubricated threads 15.5 (137) n m (lbf ? in) lubricated threads 14 (120) approximate weight 130 g case style see dimensions - link at the end of datasheet to-209ac (to-94) r thjc conduction conduction angle sinusoidal conduction rect angular conduction test conditions units 180 0.043 0.031 t j = t j maximum k/w 120 0.052 0.053 90 0.066 0.071 60 0.096 0.101 30 0.167 0.169
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93692 4 revision: 06-jun-08 110/111rki series vishay high power products phase control thyristors (stud version), 110 a fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 80 90 100 110 120 130 140 0 2040608010012 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduction angle 111rki series r (dc) = 0.27 k/w thjc 70 80 90 100 110 120 130 140 0 20 40 60 80 100 120 140 160 18 0 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 111rki series r (dc) = 0.27 k/w thjc 020406080100120140 maximum allowable ambient temperature (c) 0 . 8 k / w 1 k / w 1 . 5 k / w 4 k / w 5 k / w 0 . 6 k / w r = 0 . 3 k / w - d e l t a r t h s a 2 k / w 0 20 40 60 80 100 120 140 160 0 20406080100120 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w) average on-state current (a) 111rki series t = 140c j 0 20 40 60 80 100 120 140 maximum allowable ambient temperature (c) r = 0. 3 k/ w - d elt a r 0 . 6 k / w 0 . 8 k / w 1 k / w 1 . 5 k / w 2 k / w 4k / w 5 k / w t h s a 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 140 160 180 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) 111rki series t = 140c j
document number: 93692 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 06-jun-08 5 110/111rki series phase control thyristors (stud version), 110 a vishay high power products fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 800 1000 1200 1400 1600 1800 2000 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t = 140c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 111rki series at any rated load condition and with rated v applied following surge. rr m 500 1000 1500 2000 2500 0.01 0.1 1 1 0 pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 140c no voltage reapplied rated v reapplied rrm j 111rki series 1 10 100 1000 10000 01234 5 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 140c j 111rki series 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 1 0 square wave pulse duration (s) thjc 111rki series steady state value r = 0.27 k/w (dc operation) thjc transient thermal impedance z (k/w)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93692 6 revision: 06-jun-08 110/111rki series vishay high power products phase control thyristors (stud version), 110 a fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 100 0 vgd igd (b) (a) (1) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for frequency limited by pg(av) tj=25 c tj=-40 c tj=140 c (2) (1) pgm = 12w, tp = 5ms (2) pgm = 30w, tp = 2ms (3) pgm = 60w, tp = 1ms (4) pgm = 200w, tp = 300s <=30% rated di/dt: 15v, 40ohms tr<=1 s, tp=>6s device: 111rki series rated di/dt: 20v, 30ohms; tr<=0.5 s, tp=>6s rectangular gate pulse (4) 1 -i t(av) rated average output current (rounded/10) 4 - voltage code x 10 = v rrm (see voltage ratings table) 3 - thyristor 2 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) device code 13 24 11 1 rki 120 links to related documents dimensions http://www.vishay.com/doc?95003
document number: 95363 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 25-sep-08 1 to-209ac (to-94) for 1 10rki and 111rki series outline dimensions vishay semiconductors dimensions in millimeters (inches) note ? for metric device: m 12 x 1.75 contact factory fast-on terminals c.s. 0.4 mm 2 white shrink red shrink red cathode red silicon rubber ? 4.3 (0.17) 10 (0.39) max. (0.0006 s.i.) ceramic housing ? 8.5 (0.33) 16.5 (0.65) max. ? 22.5 (0.88) max. c.s. 16 mm 2 (0.025 s.i.) flexible lead 2.6 (0.10) max. 29.5 (1.16) max. 1/2"-20unf-2a sw 27 9.5 (0.37 ) min. white gate amp. 280000-1 ref-250 20 (0.79) min. 24 (0.94) max. 21 (0.83) max. 157 (6.18) 170 (6.69) 55 (2.16) min. 215 10 (8.46 0.39)
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